MG150J7KS50 is a high speed Silicon N Channel IGBT, Toshiba GTR module and can used in various high power switching applications and motor control applications. The basic product features correspond to a state of high input impedance and the part is in enhancement mode. The electrodes are isolated from the case and 7 IGBT’s are built into 1 package. The weight of MG150J7KS50 is 520 g.
Maximum Ratings And Electrical Specifications Of MG150J7KS50
MG150J7KS50 ratings are noted down in Inverter Stage and Brake Stage. The temperature (Ta) in all stages is taken to be 25oC.
The maximum rating for Collector emitter voltage of MG150J7KS50 in Inverter stage is 600V, while the corresponding figure for Gate emitter voltage is +- 20V. The Collector Current (DC) and the Forward Current (DC) both have a maximum rating of 150A and the Collector Power Dissipation is at a rate of 320W. The Junction temperature in both Inverter and Brake stage is 150oC.
The Electrical characteristics of MG150J7KS50 in the Inverter stage and Brake stage suggest a Gate leakage Current of maximum +-500nA and the Collector emitter cut-off current is max 1mA. The input capacitance reading is 12nF in Inverter stage and 4nF in the Brake stage and the Forward voltage (Inverter stage) for the type is 2.5V.
The corresponding Maximum and Electrical ratings of MG150J7KS50 in the Brake stage refer to Collector emitter voltage of 600V, Gate emitter voltage as +- 20V, the Collector Current (DC) and the Forward Current (DC) as 50A and the Collector Power Dissipation is at a rate of 120W. The Forward voltage for the type is 2.2V.
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