SRAM Design-ed

SRAM Design usually consists of one or more rectangular arrays of memory cells with support circuitry to decode addresses, which implement the required read and write operations. The total size of the memory, the speed at which the memory must operate, layout and testing requirements, and the number of data I/Os on the chip determine the number of arrays on a memory chip. Each SRAM memory cell consists of a bi-stable flip-flop. The flip-flop is usually made up of four to six transistors and may be in either of two states that can be interpreted by the support circuitry to be a 1 or a 0.

The SRAM memory arrays are arranged in rows and columns of memory cells. The rows are referred to as wordlines and the columns as bitlines. Each memory cell has its own unique location or address, which is defined by the intersection of a row and column. Each memory cell's location is linked to a particular data input/output pin.

Most SRAMs use a four transistor cell with a polysilicon load. Such SRAMs with four transistor cell are ideal for medium to high performance. However, the four transistor cell design has a relatively high leakage current. This also means SRAMs consume a high amount of power during standby mode. Four transistor designs are also said to exhibit various types of radiation induced soft errors. Some SRAMs use a six transistor memory cell. These devices are said to be highly stable and are usually not prone to soft errors. They also have low leakage and standby current consumption.

Parts from USBid:
74F367J
2725501
2SA1523-AC
1206J6K8
TSW10706TD

V53C8256HP45 Is the High Speed for Memory Applications

V53C8256HP45 is a high speed CMOS dynamic random access memory from Mosel Vitelic. The fast page mode of this device allows for high data bandwidth. Also contributing to the impressive speed of this component is its fast usable speed.

V53C8256HP45 is more than just a fast RAM, though. By lowering the input and output capacitances significantly, the designers of this great memory device have increased system performance, making this product an improvement over past designs with its low power dissipation.

A High Quality Memory for High-Quality Applications

V53C8256HP45 has such a high speed that it is an excellent component for a variety of needs. For example, V53C8256HP45 is ideal for digital signal processing, high performance computing, and graphics. With a maximum access time of only 45 ns, surely this high quality memory can meet a variety of your circuitry needs in many of your high-end products.

Other high speed dynamic RAMs include
DP8429 NS32829 1 Megabit High Speed Dynamic RAM Controller/Driver
A416316BV-35L 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
GLT41316-20T 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

P82C302 – A Part of the 803086 Microprocessor Family

P82C302 is a memory support circuit and a page/interface memory controller from Chips and Technologies, Inc using CMOS technology. The maximum clock frequency is 16MHzm, and the supply voltage is 5.0. IT comes in a QCC-J package with 84 pins.

Similar Products include
CP82C37A-12 CMOS High Performance Programmable DMA Controller
IP82C37A-5 CMOS High Performance Programmable DMA Controller
TMP82C37AT-5 multimode DMA controller

MTD20N03HDL Is an Ideal Solution for Low Voltage, High Speed Switching Applications

MTD20N03HDL is an advanced HDTMOS power FET. It’s a new energy-efficient design, but it’s also valuable because it withstands high energy in the avalanche and commutation modes. The MTD20N03HDL is also great for bridge circuits that need critical diode speed and commutating safe operating areas. Another feature of this great device is another safety margin to protect against unexpected voltage transients.

Great for power supplies, converters and PWM motor controls

MTD20N03HDL has a source-to-drain recovery time that is comparable to a discrete fast recovery diode.

The high cell density MOSFET diode is much faster than its low cell density counterpart, making it possible for MTD20N03HDL to be forced through reverse recovery at a higher rate without increasing noise generation or current ringing. The shorter recovery time and the lower switching losses also contribute to decreased power dissipation from switching the diode.

Similar products include
M7P75N06HD FET Transistor, HDTMOS E-FET High Density Power FET, N-Channel Enhancement-Mode Silicon Gate
MMDF3N02HDR1 FET Transistor, HDTMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
20N03HL HDTMOS E-FET High Density Power FET DPAK for Surface Mount

MT8806AP

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TQ2-12V

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HI2303JCQ

Supply Report

USA IMMEDIATE SOURCING PROBABILITY 91%

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DS87C520-MCL

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USA IMMEDIATE SOURCING PROBABILITY 90%

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NE8MC-B

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CO48025-33.000

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BAS-16BAS-16 USA AVAILABILITY IN STOCK PROBABILITY 94%BAS-16 EUROPE AVAILABILITY IN STOCK PROBABILITY 89%BAS-16 ASIA AVAILABILITY IN STOCK PROBABILITY 98%

BFR505

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MAX813LCSA-T

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DS26C31TM

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MG150J7KS50 – A TOSHIBA’S IGBT POWER MODULE

MG150J7KS50 is a high speed Silicon N Channel IGBT, Toshiba GTR module and can used in various high power switching applications and motor control applications. The basic product features correspond to a state of high input impedance and the part is in enhancement mode. The electrodes are isolated from the case and 7 IGBT’s are built into 1 package. The weight of MG150J7KS50 is 520 g.

Maximum Ratings And Electrical Specifications Of MG150J7KS50

MG150J7KS50 ratings are noted down in Inverter Stage and Brake Stage. The temperature (Ta) in all stages is taken to be 25oC.

The maximum rating for Collector emitter voltage of MG150J7KS50 in Inverter stage is 600V, while the corresponding figure for Gate emitter voltage is +- 20V. The Collector Current (DC) and the Forward Current (DC) both have a maximum rating of 150A and the Collector Power Dissipation is at a rate of 320W. The Junction temperature in both Inverter and Brake stage is 150oC.

The Electrical characteristics of MG150J7KS50 in the Inverter stage and Brake stage suggest a Gate leakage Current of maximum +-500nA and the Collector emitter cut-off current is max 1mA. The input capacitance reading is 12nF in Inverter stage and 4nF in the Brake stage and the Forward voltage (Inverter stage) for the type is 2.5V.

The corresponding Maximum and Electrical ratings of MG150J7KS50 in the Brake stage refer to Collector emitter voltage of 600V, Gate emitter voltage as +- 20V, the Collector Current (DC) and the Forward Current (DC) as 50A and the Collector Power Dissipation is at a rate of 120W. The Forward voltage for the type is 2.2V.

EPF10K200SFC672-1X – A SPECIALIZED MEGA-FUNCTION ENABLER

EPF10K200SFC672-1X is an embedded programmable logic device (PLD), providing System-on-a-programmable-chip integration in a single device, like many other electronic components introduced by Altera in the PLD series. These programmable logic devices especially incorporate an embedded array, which ensures successful execution of various mega functions like efficient memory operations and specialized logic functional requirements. The PLDs further have a dual port capability. Falling under the Flex 10 KE series of Altera’s PLDs, EPF10K200SFC672-1X is a perfect example of specialized executor of several crucial tasks.

The Device Features

EPF10K200SFC672-1X under the head of electric devices presented by Altera falls in the category of EPF10K200S PLDs. The electrical devices of the EPF10K200S series typically have about 2,00,000 gates. The maximum system gates are 5,13,000 and the logic elements correspond to a figure of 9,984. There are 24 EABs in these components and the RAM bits equal a total of 98,304. With 470 user I/O pins, EPF10K200SFC672-1X is fabricated on an advanced process and also enables CloackLockTM and ClockBoostTM options for reduced clock delay / skew and multiplication facilities.

The embedded programmable logic devices, including the EPF10K200SFC672-1X further support flexible interconnection and powerful I/O pins. To further add to the user’s ease of operability, flexible package options are also provided. FLEX 10KE devices are an enhanced version of the earlier introduced FLEX 10K devices by Altera. The FLEX architecture is based on the re-configurable CMOS SRAM elements. Considering this and many more salient features of EPF10K200SFC672-1X, it can certainly be considered as an electronic device incorporating all essential features required to implement common gate array mega functions.

E5CS-Q1PX – A RELIABLE EQUIPMENT

E5CS-Q1PX is a 1/16 DIN sized temperature controller manufactured by OMRON, which offers selectable control and selection of various alarm modes. The key highlights that certainly mark OMRON temperature controllers as a preferred choice include, high accuracy in readings (to +- 0.5% of full scale), unmatched flexibility offered by multiple temperature scale ranges to match specific application requirements and selectable on / off and PID control with auto tuning facilities of proportional band. Also included in the set is the standard 8-fucntion alarm, easy to read 11mm high LED display, a nonvolatile memory backup and tamper proof settings, faulty sensor compensation and controller diagnostics. To further add, all these features are bundled together with a three-year warranty assurance.

The Unmatchable Self-Diagnostic Function

Given the mentioned features, E5CS-Q1PX can certainly be considered a reliable device. To further ensure secured usage, the temperature controllers of the E5CS-X series have an inbuilt self-diagnostic function that displays various error messages, in case of a technical issue, to facilitate easy troubleshooting.

For instance, a message FFF on the screen of E5CS-Q1PX indicates that either the temperature has risen beyond the temperature scale range or the Thermistor has been short circuit. Depending upon the cause statement highlighted, appropriate control output is initiated. In the specified case, if the temperature has risen, the control output is OFF during heating (reverse) operation and if the Thermistor has been short circuited, the control output function is ON during cooling (normal) operation. In various other situations, depending upon the requirement, the appropriate messages are displayed and if required, the control output disables the key operations.

CM300DY-24H – A 1200 V, 300 AMP DUAL IGBT MODULE

MITSUBISHI’s CM300DY-24H is a dual IGBT, insulated type module used in switching applications where IGBT stands for Insulated Gate Bipolar Transistor. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. The components and interconnects to ensure simplified system assembly and thermal management, are isolated from the heat sinking base plate. The other key features are low drive power, high frequency operation and low VCE. The electrical device can be used for various applications including usage in AC motor control, motion/servo control, UPS and wielding power supplies.

Details Of The Maximum Ratings And Electrical Characteristics Of CM300DY-24H

The details furnished below corresponding to CM300DY-24H are true given a device Junction Temperature of 25oC.

The Collector Emitter Voltage rating is 1200 V, the Gate Emitter Voltages count is +- 20V and the Isolation Voltage is 2500 V. The Collector and Emitter Current refer to a figure of 300 Amp and the maximum Collector Dissipation is 2100 W. The typical weight of CM300DY-24H is 500 g and the Storage Temperature range is from – 40oC to + 125oC.

As for the important Electrical Characteristics, the Collector Cutoff Current must not exceed a maximum of 1 mA and the maximum limit for Gate Leakage Current is 0.5 μA. The optimal Gate emitter threshold voltage is 7.5 V (6 V being the optimum) and the Collector emitter saturation voltage for the concerned type is 2.5 V. The Input and Output Capacitance are 70 nF and 10 nF.

UPG501B – A Handy Pre-Scaler by NEC

UPG501B, a NEC product, is a GaAs divide-by-4 pre-scaler that can be operated in a frequency range of 1.5 GHz to 5 GHz. It is a static divider with two master slave D type flip-flops and operates from a single supply voltage (+10 Volts). The key application of a UPG501B is in frequency synthesizers of microwave communication systems and measurement equipments. The manufacturers i.e. the NEC commits guaranteed performance over an ambient temperature range (i.e. from – 25oC to + 75oC) and provides the product in a reliable and easily usable hermetically sealed 8 – lead ceramic flat package.

Damage Prevention Guidelines

UPG501B is a handy electronic device and keeping few basic usage guidelines in the forefront, can help deal with any permanent damages to the product features. The supply voltage of 10V, for instance, is perfect for UPG501B. However in any circumstances must not be above +12V. Similarly, the supply current must not exceed beyond 150 mA and the total power dissipation rating can be at a maximum of 1.5W. The suggested operating temperature range is – 65oC to + 125oC. The storage temperature however, can go up to a positive temperature of 175oC, the minimum being - 65oC.

There are possibilities, when due to high internal gain and gain compression, UPG501B could end up in self-oscillation. The same can be managed by either adding a shunt resistor to the RF input line or by applying a negative voltage through a 1000-ohm resistor to the normally open VGG connection.

Other Prescalers:

UPB1510GV, 3 GHz INPUT DIVIDE BY 4 PRESCALER
HMMC-3024, 12 GHz divide by 4 prescaler
25675DV-QFN, DC to 25 GHz Divide-by-4 Prescaler

High-speed pin diodes are stabile and reliable

Now available from RF and microwave component specialist Link Microtek is a range of high-speed PIN diodes that are made from high-resistively epitaxial silicon material, passivated with silicon dioxide to achieve high levels of stability and reliability.
Capable of operating with as little as +10mA forward bias, the devices are ideal for RF switching applications in telecommunications, radar and ECM systems, and they can also be used as current-controlled resistors in attenuator-type applications over the frequency range from UHF to Ku band.

Available from www.usbid.com - Diode Silicon Epitaxial Planar Type - 015AZ2.0~015AZ12 is designed for Constant Voltage Regulation Applications. Toshiba Diode Silicon Epitaxial Planar Type 015 AZ 2.0 • 015AZ2.0-X. Flash memory may be ordered from USBid catalog page http://www.usbid.com/search/AddPartNoLogin_action.cfm

PFC diodes are needed
Choosing a suitable diode is the easiest and most cost-effective way of reducing both the peak power and the average switching losses in the MOSFET.

Conventional ultra fast epitaxial diodes are optimized for low forward voltage as well as short recovery time. Diodes for use in power factor correction circuits have higher forward voltage but much shorter reverse recovery times in order to reduce the transistor losses

Active power factor correction has a number of advantages, which result from removing the effect of power line voltage variations:
• Greater efficiency and better line voltage regulation in the downstream switched mode converter stages.
• Use of a smaller reservoir capacitor for a given hold-up time, because energy storage is always at a higher voltage than the peak of the rectified mains.
• Lower peak current in the mains input rectifier diodes and lower ripple current in the reservoir capacitor
• Operation over the full international range of power line voltages (90-V - 277-V AC rms) without range switching

In contrast, ultra fast epitaxial diodes designed for power factor correction need to have much faster reverse recovery in order to reduce the MOSFET switching losses.
The reverse recovery time of a BYC5 power factor correction diode is typically 15 ns at 500 A/-Mu s, 25 Celsius, and the maximum forward voltage is 2.8 V at 5 A, 25 Celsius. This represents the optimum trade-off between forward voltage and reverse recovery time in this application

The Basics of Heat Sinks

The overall efficiency of various heat-sink types mainly depends on the following three factors:
• material.
• surface area,
• structure or shape

Cooling capabilities relate directly to the surface area; the larger the surface area, the more heat that can be dissipated. Physical structure is yet another factor. Proper structure increases turbulent airflow which creates a more competent heat sink.
The heat-sink material is also critical. Copper, for example, has excellent cooling qualities compared to aluminum because the thermal conductivity of copper is much higher than the conductivity of aluminum. At room temperature, copper has a thermal conductivity of exactly 401 W/m-K. Aluminum is 235 W/m-K. Therefore, a heat sink made of copper dissipates more significantly more heat than a heat sink made from aluminum.

One such example is the Pin Fin Heat Sinks 628-65ABT3

Home appliances become more efficient with new ICs

Trends in appliance motors
Permanent magnet synchronous motors are beginning to replace split-phase induction motors in appliances as a means of boosting efficiency while reducing part costs. PM synchronous motors work at variable speeds and may become part of the appliance structure itself, perhaps eliminating the need for separate gearboxes and belt drives used to harness power from induction motors. Component IRMC xxx family through USBid

Integrated chips in PMS motors
Integrated circuits aimed at managing motors and power supplies may help boost the efficiency of
consumer goods such as air conditioners, washer/dryers, refrigerators, and video games. Special interface chips for appliances and switching power supplies that facilitate the use of advanced motors and controls can all be found through USBid. One new chip targets permanent-magnet synchronous (PMS) motors that are now being designed into major appliances. These motors are starting to be specified in place of ordinary split-phase induction motors, which have served in washer/dryers and refrigerators for decades. Besides being more energy efficient, PMS motors are smaller than comparable induction motors and less expensive as well because they use less steel. PMS motors have also begun showing up in condensing units of split-system residential air conditioners. There is also a single-rotary compressor incorporating a PMS motor that is said to be as efficient as more-expensive scroll compressors. The chipmakers are targeting motors in condensing units specifically with the development of what it calls an iMotion integrated power-design platform. It lets appliance makers control PMS motors with variable-speed sinusoidal current control. This control technique eliminates the need for Hall-effect sensors that would ordinarily be necessary to gauge rotor position. The platform, dubbed the IRMCxx family and can ordered through USBid, is billed as an IC, complete with power-factor correction. The only feedback it needs for operation comes from a dc link-current sensor. It runs embedded motor-control algorithms with an independent application layer processor that handles tasks specific to different classes of appliances. The chip can be keyed to different kinds of appliances through the use of appliance-specific high-voltage IC sections and intelligent power modules already in place.

Integrated chips used in air conditioners
For example, the air-conditioning platform incorporates a proprietary algorithm for interior PMS motors driving both the AC compressor and fan. Combined with application-specific HVICs and discrete trench IGBTs to handle the output power, the controller is said to hit 95% converter efficiency. In this regard it works with individual PMS motor manufacturers to tune converter parameters for best efficiency. Digital controls on the chips consist of a Motion Control Engine (MCE) that implements the sensorless algorithm in hardware, plus an embedded analog signal engine that handles all signal-conditioning and conversion circuits for single-current shunt sensorless control. The MCE executes the sensorless field-oriented control algorithm in about 11 _sec. This speedy execution is key to handling fan and compressor motors simultaneously. An application layer processor on the chip defines the operation of the air-conditioning system independently from the MCE that controls the fan and compressor motors. The intent of this separate processor is to let appliance makers focus on application issues rather than on motor control. Appliance makers may locate the PMS chips (IRMC) through Get Parts Fast a USBid, Inc. sourcing site.

Where Does One Find Digital ICs

If you have ever tried to find the first generation of digital ics you know what a night mare that can be. Luckily there are sites like Buy Parts Fast and Locate IC out there. Just make sure you know your part number like S1680160 and you are set