MITSUBISHI’s CM300DY-24H is a dual IGBT, insulated type module used in switching applications where IGBT stands for Insulated Gate Bipolar Transistor. Each module consists of two IGBTs in a half-bridge configuration with each transistor having a reverse connected super fast recovery free wheel diode. The components and interconnects to ensure simplified system assembly and thermal management, are isolated from the heat sinking base plate. The other key features are low drive power, high frequency operation and low VCE. The electrical device can be used for various applications including usage in AC motor control, motion/servo control, UPS and wielding power supplies.
Details Of The Maximum Ratings And Electrical Characteristics Of CM300DY-24H
The details furnished below corresponding to CM300DY-24H are true given a device Junction Temperature of 25oC.
The Collector Emitter Voltage rating is 1200 V, the Gate Emitter Voltages count is +- 20V and the Isolation Voltage is 2500 V. The Collector and Emitter Current refer to a figure of 300 Amp and the maximum Collector Dissipation is 2100 W. The typical weight of CM300DY-24H is 500 g and the Storage Temperature range is from – 40oC to + 125oC.
As for the important Electrical Characteristics, the Collector Cutoff Current must not exceed a maximum of 1 mA and the maximum limit for Gate Leakage Current is 0.5 μA. The optimal Gate emitter threshold voltage is 7.5 V (6 V being the optimum) and the Collector emitter saturation voltage for the concerned type is 2.5 V. The Input and Output Capacitance are 70 nF and 10 nF.
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