MTD20N03HDL is an advanced HDTMOS power FET. It’s a new energy-efficient design, but it’s also valuable because it withstands high energy in the avalanche and commutation modes. The MTD20N03HDL is also great for bridge circuits that need critical diode speed and commutating safe operating areas. Another feature of this great device is another safety margin to protect against unexpected voltage transients.
Great for power supplies, converters and PWM motor controls
MTD20N03HDL has a source-to-drain recovery time that is comparable to a discrete fast recovery diode.
The high cell density MOSFET diode is much faster than its low cell density counterpart, making it possible for MTD20N03HDL to be forced through reverse recovery at a higher rate without increasing noise generation or current ringing. The shorter recovery time and the lower switching losses also contribute to decreased power dissipation from switching the diode.
Similar products include
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