SRAM Design-ed

SRAM Design usually consists of one or more rectangular arrays of memory cells with support circuitry to decode addresses, which implement the required read and write operations. The total size of the memory, the speed at which the memory must operate, layout and testing requirements, and the number of data I/Os on the chip determine the number of arrays on a memory chip. Each SRAM memory cell consists of a bi-stable flip-flop. The flip-flop is usually made up of four to six transistors and may be in either of two states that can be interpreted by the support circuitry to be a 1 or a 0.

The SRAM memory arrays are arranged in rows and columns of memory cells. The rows are referred to as wordlines and the columns as bitlines. Each memory cell has its own unique location or address, which is defined by the intersection of a row and column. Each memory cell's location is linked to a particular data input/output pin.

Most SRAMs use a four transistor cell with a polysilicon load. Such SRAMs with four transistor cell are ideal for medium to high performance. However, the four transistor cell design has a relatively high leakage current. This also means SRAMs consume a high amount of power during standby mode. Four transistor designs are also said to exhibit various types of radiation induced soft errors. Some SRAMs use a six transistor memory cell. These devices are said to be highly stable and are usually not prone to soft errors. They also have low leakage and standby current consumption.

Parts from USBid:
74F367J
2725501
2SA1523-AC
1206J6K8
TSW10706TD

V53C8256HP45 Is the High Speed for Memory Applications

V53C8256HP45 is a high speed CMOS dynamic random access memory from Mosel Vitelic. The fast page mode of this device allows for high data bandwidth. Also contributing to the impressive speed of this component is its fast usable speed.

V53C8256HP45 is more than just a fast RAM, though. By lowering the input and output capacitances significantly, the designers of this great memory device have increased system performance, making this product an improvement over past designs with its low power dissipation.

A High Quality Memory for High-Quality Applications

V53C8256HP45 has such a high speed that it is an excellent component for a variety of needs. For example, V53C8256HP45 is ideal for digital signal processing, high performance computing, and graphics. With a maximum access time of only 45 ns, surely this high quality memory can meet a variety of your circuitry needs in many of your high-end products.

Other high speed dynamic RAMs include
DP8429 NS32829 1 Megabit High Speed Dynamic RAM Controller/Driver
A416316BV-35L 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE
GLT41316-20T 64K X 16 CMOS DYNAMIC RAM WITH FAST PAGE MODE

P82C302 – A Part of the 803086 Microprocessor Family

P82C302 is a memory support circuit and a page/interface memory controller from Chips and Technologies, Inc using CMOS technology. The maximum clock frequency is 16MHzm, and the supply voltage is 5.0. IT comes in a QCC-J package with 84 pins.

Similar Products include
CP82C37A-12 CMOS High Performance Programmable DMA Controller
IP82C37A-5 CMOS High Performance Programmable DMA Controller
TMP82C37AT-5 multimode DMA controller

MTD20N03HDL Is an Ideal Solution for Low Voltage, High Speed Switching Applications

MTD20N03HDL is an advanced HDTMOS power FET. It’s a new energy-efficient design, but it’s also valuable because it withstands high energy in the avalanche and commutation modes. The MTD20N03HDL is also great for bridge circuits that need critical diode speed and commutating safe operating areas. Another feature of this great device is another safety margin to protect against unexpected voltage transients.

Great for power supplies, converters and PWM motor controls

MTD20N03HDL has a source-to-drain recovery time that is comparable to a discrete fast recovery diode.

The high cell density MOSFET diode is much faster than its low cell density counterpart, making it possible for MTD20N03HDL to be forced through reverse recovery at a higher rate without increasing noise generation or current ringing. The shorter recovery time and the lower switching losses also contribute to decreased power dissipation from switching the diode.

Similar products include
M7P75N06HD FET Transistor, HDTMOS E-FET High Density Power FET, N-Channel Enhancement-Mode Silicon Gate
MMDF3N02HDR1 FET Transistor, HDTMOS E-FET High Energy Power FET N-Channel Enhancement-Mode Silicon Gate
20N03HL HDTMOS E-FET High Density Power FET DPAK for Surface Mount

MT8806AP

Supply Report

USA IMMEDIATE SOURCING PROBABILITY 93%

EUROPE IMMEDIATE SOURCING PROBABILITY 86%

MT8806AP ASIA IMMEDIATE SOURCING PROBABILITY 92%

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TQ2-12V

Supply Report

USA IMMEDIATE SOURCING PROBABILITY 91%

TQ2-12V EUROPE IMMEDIATE SOURCING PROBABILITY 89%

ASIA IMMEDIATE SOURCING PROBABILITY 86%

IS AVAILABLE FOR SAME DAY SHIPPING VIA NowComponents.

HI2303JCQ

Supply Report

USA IMMEDIATE SOURCING PROBABILITY 91%

HI2303JCQ EUROPE IMMEDIATE SOURCING PROBABILITY 92%

ASIA IMMEDIATE SOURCING PROBABILITY 83%

HI2303JCQ IS AVAILABLE FOR SAME DAY SHIPPING VIA USBid.